| PART |
Description |
Maker |
| NE3512S02-T1D-A NE3512S02 NE3512S02-T1D NE3512S02- |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE3510M04-T2 NE3510M04-A NE3510M04-T2-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Laboratories
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 2SK3653C |
JUNCTION FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| 2N3823 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
MICRO-ELECTRONICS[Micro Electronics]
|
| NJ450L |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ42 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| SMPJ304 SMPJ305 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| 2N5457 2N5458 |
SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
